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advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 1 general description the ap2810 is an integrated high-side power switch that consists of n-channel mosfet, charge pump, over current & temperature and other related protection circuits. the switch? s low rds (on), 60m , design easily to meet usb voltage drop requirements. it includes soft-start to limit inrush current, over-current protection, load short protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. under voltage lockout (uvlo) function is used to ensure the device remain off unless there is a valid input voltage present. a flag output is available to indicate fault conditions to the local usb controller. the ap2810 is available in standard packages of soic-8 and msop-8. features ? low mosfet on resistance: 60m ? @v in =5.0v ? compliant to usb specifications ? operating voltage range: 2.7v to 5.5v ? low supply current: 65a (typ) ? low shutdown current: 1.0a (max) ? guarantee 1.0a continuous load ? current limit: 1.1a (min), 2.1a (max) ? under-voltage lockout ? logic level enable pin: available in active-high or active-low version ? over-current protection ? over temperature protection ? load short protection with fold-back ? no reverse current when power off ? with output shutdown pull-low resistor for a/c versions applications ? usb power management ? usb bus/self powered hubs ? hot-plug power supplies ? battery-charger circuits ? notebooks, motherboard pcs figure 1. package types of ap2810 soic-8 msop-8
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 2 pin configuration m/mm package soic-8/msop-8 figure 2. pin configurat ion of ap2810 (top view) pin descriptions pin number pin name function 1 gnd ground 2, 3 vin supply input pin 4 chip enable control input, active low or high 5 fault flag pin, output with open drain, need a pull-up resistor in application, acti ve low to indicate ocp or otp 6, 7, 8 vout switch output voltage
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of ap2810
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 4 ordering information ap2810 - circuit type product package condition temperature range part number marking id packing type green green AP2810A soic-8 active high with auto discharge -40 to 85 c AP2810Am-g1 2810am-g1 tube AP2810Amtr-g1 2810am-g1 tape & reel msop-8 AP2810Amm-g1 2810amm-g1 tube AP2810Ammtr-g1 2810amm-g1 tape & reel ap2810b soic-8 active high without auto discharge -40 to 85 c ap2810bm-g1 2810bm-g1 tube ap2810bmtr-g1 2810bm-g1 tape & reel msop-8 ap2810bmm-g1 2810bmm-g1 tube ap2810bmmtr-g1 2810bmm-g1 tape & reel ap2810c soic-8 active low with auto discharge -40 to 85 c ap2810cm-g1 2810cm-g1 tube ap2810cmtr-g1 2810cm-g1 tape & reel msop-8 ap2810cmm-g1 2810cmm-g1 tube ap2810cmmtr-g1 2810cmm-g1 tape & reel ap2810d soic-8 active low without auto discharge -40 to 85 c ap2810dm-g1 2810dm-g1 tube ap2810dmtr-g1 2810dm-g1 tape & reel msop-8 ap2810dmm-g1 2810dmm-g1 tube ap2810dmmtr-g1 2810dmm-g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. g1: green tr: tape & reel blank: tube package m: soic-8 mm: msop-8 condition a: active high w ith auto discharge b: active high without auto discharge c: active low with auto discharge d: active low without auto discharge
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.0 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering,10 seconds) t lead 260 oc thermal resistance junction to ambient ja soic-8 135 o c / w msop-8 150 esd (machine model) 200 v esd (human body model) 2000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.7 5.5 v operating ambient temperature range t a -40 85 c
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 6 electrical characteristics (v in =5.0v, c in =2.2f, c out =1.0f, typical t a =25c, unless otherwise specified) parameter symbol conditions min typ max unit input voltage range v in 2.7 5.5 v switch on resistance r ds(on) v in =5v, i out =1.0a 60 80 m ? current limit i limit v out =4.0v 1.1 1.5 2.1 a supply current i supply v in =5v, no load 65 85 a fold-back short current i short v out =0 0.6 a shutdown supply current i shutdown chip disable, shutdown mode 0.1 1 a enable high inpu t threshold v enh 1.6 5.5 v enable low inpu t threshold v enl 0 1.0 v enable pin input current i en force 0v to 5.0v at en pin -1.0 1.0 a under voltage lockou t threshold voltage v uvlo v in increasing from 0v 2.2 2.5 2.7 v under voltage hysteresis v uvlohy 0.2 v reverse current i reverse chip disable, v out >v in 0.1 1.0 a output pull low resistance after shutdown r discharge AP2810A, ap2810c only 100 200 ? output turn-on time t on from enable active to 90% of output 500 s flag delay time t dflg from fault condition to flag active 5 10 15 ms flag low voltage v flg i sink =5ma 35 70 mv flag leakage i leakage flag disable, force 5.0v 1.0 a thermal shutdown temperature t otsd 150 o c thermal shutdown hysteresis t hyotsd 30 o c
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 7 typical performance characteristics figure 4. supply current vs. ambient temperature figure 5. supply current vs. supply voltage figure 6. current limit vs. supply voltage figure 7. current limit vs. ambient temperature -40-20 0 20406080 0 10 20 30 40 50 60 70 80 90 100 v in =5v enable active no load supply current ( a) ambient temperature ( o c) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -10 0 10 20 30 40 50 60 70 80 90 100 t a =-40 o c t a = 25 o c t a = 85 o c enable active supply current ( a) supply voltage (v) 3.0 3.5 4.0 4.5 5.0 5.5 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 t a =25 o c enable active current limit (a) supply voltage (v) -40-20 0 20406080 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v in =3.3v v in =5v enable active current limit (a) ambient temperature ( o c)
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 8 typical performance characteristics (continued) figure 8. output short current vs. figure 9. output short current vs. input voltage ambient temperature figure 10. shutdown current vs. ambient temperature figure 11. reverse current vs. ambient temperature 3.0 3.5 4.0 4.5 5.0 5.5 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 output short current (a) input voltage (v) t a =25 o c enable active -40-20 0 20406080 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 output short current (a) ambient temperature ( o c) v in =5v enable active -40-200 20406080 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 shutdown current ( a) ambient temperature ( o c) v in =5v disable active -40-20 0 20406080 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 v in =3.5v v out =4.5v disable active reverse current ( a) ambient temperature ( o c)
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 9 typical performance characteristics (continued) time(500s/div) time(500s/div) figure 12. output turn on and rise time figure 13. output turn on and rise time (c in =1.0 f, c out =1.0 f, no load) (c in =1.0 f, c out =1.0 f, r l =5.0 ? ) time(500s/div) time(5ms/div) figure 14. output turn on and rise time figure 15. output turn off and falling time (c in =1.0 f, c out =100 f, no load) (v in =5v, c in =1.0 f, no load) v en (5v/div) i inrush (20ma/div) v out (1v/div) v en (5v/div) i inrush (1a/div) v out (1v/div) v en (5v/div) i inrush (1a/div) v out (1v/div) v en (5v/div) v out (1v/div) c out =1 f c out =22 f c out =100 f c out =220 f c out =470 f
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 10 typical performance characteristics (continued) time(2ms/div) time(100ms/div) figure 16. output turn off and falling time figure 17. output short to gnd current (v in =5v, c in =1.0 f, c out =470 f, r l =5.0 ? ) (v in =5v,c in =1.0 f) time(5ms/div) time(5ms/div) figure 18. flag response during over current figure 19. flag response during over temperature (v in =5v, c in =1.0 f, c out =470 f) (v in =5v, c in =1.0 f, c out =220 f, r l =5.0 ? ) v en (5v/div) v out (1v/div) i out (1a/div) v en (5v/div) v out (1v/div) i out (1a/div) v flag (1v/div) v out (1v/div) i out (1a/div) v flag (1v/div) v out (1v/div) i out (1a/div)
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 11 typical application note 2: 2.2 f input capacitor is enough in most application cases. if the vout is short to ground frequently during usag e, large size input capacito r is necessary, recommend 22 f. figure 20. typical application of ap2810
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 12 mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
advance datasheet 1.0a high-side power distribution switch with enable and flag ap2810 jul. 2012 rev 1. 2 bcd semiconductor manufacturing limited 13 mechanical dimensions (continued) msop-8 unit: mm(inch) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 )
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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